| PART |
Description |
Maker |
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| FS30KM-2 |
30 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FN
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| KAQV214S V214S |
HIGH VOLTAGE PHOTO MOS RELAY
High Voltage, Solid State Relay-MOSFET Output
|
Cosmo Electronics
ETC
COSMO[COSMO Electronics Corporation]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| FS10VSJ-2 |
CONN, RCPT (F), SMB, 50 OHM, RTANG PC MTG, AU 10 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Mitsubishi Electric Corporation
|
| RJK1008DPN RJK1008DPN-00-02 |
80 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SC-46, 3 PIN
N-Channel Power MOSFET High-Speed Switching Use
|
Lattice Semiconductor, Corp.
Renesas Electronics Corporation
|
| AUIRS2332JTR |
Automotive High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
|
International Rectifier
|
| SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
